A 0.6-22-GHz Broadband CMOS Distributed Amplifier
نویسندگان
چکیده
[51 Bondwire inductors 0.3 3 5 * 1.2 0 . 7 2 ~ 0.32 5.1 7 4.7 c -6 4 9 3 54 Abstrncf A CMOS distributed amplifier (DA) covering 0.6 to 22 GHz is presented in this paper. Cascode gain cells and m-derived matching sections are used to enhance the gain and bandwidth performance. The DA chip achieves measured gain of 7.3 f 0.8 dB with chip area of 0.9 x 1.5 mm’ including testing pads. The amplifier was fabricated in a standard 0.18-pm CMOS technology and demonstrated the highest frequency and bandwidth of operation among previously reported amplifiers using regular CMOS processes to date.
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